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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD819 DESCRIPTION *High Collector-Base Breakdown Voltage: V(BR)CBO= 1500V (Min.) *Low Collector Saturation Voltage*High Switching Speed APPLICATIONS *Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i MAX 1500 600 5 3.5 -3.5 50 UNIT V V .cn mi e V IC Collector Current-Continuous A IE Emitter Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC W Tj 150 Tstg Storage Temperature Range -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD819 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 10 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.5A; VCE= 5V COB Output Capacitance fT Current-Gain--Bandwidth Product tf Fall Time w w w. sem isc IC= 0.1A; VCE= 10V ICP= 3A; IB1(end)= 0.8A IE= 0; VCB= 10V; ftest= 1.0MHz .cn i 8 95 pF 3 MHz 1.0 s isc Websitewww.iscsemi.cn |
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